After more than a decade of intense research, the understanding of spin torqueís microscopic origins
and the resulting magnetization dynamics has reached such a level of maturity that it is possible to predict accurately
through coupled transport/micromagnetic simulations the device behaviour.
By adjusting the input current waveform, by playing with the materials and geometry, we are now able, through
spin torque engineering,
to implement complex functions at the nano-scale. Many different spin torque functionalities, such as binary memory,
microwave oscillations, microwave detection, spin wave emission, and memristive effects have been experimentally demonstrated at room